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Home Formosa Microsemi

FMOS2310B-H

FMOS2310B-H

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FMOS2310B-H

Package: SOT-23; Type: N MOS; BVDSS (V): 60; ID (A): 3; PD (W): 1.25; IDSS @VDSS(V): 60; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 75m; RDSON1 Max.(Ω): 90m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 3; RDSON2 Typ.(Ω): 90m; RDSON2 Max.(Ω): 110m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 410; Qg Typ.(nC): 12; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: SOT-23; Type: N MOS; BVDSS (V): 60; ID (A): 3; PD (W): 1.25; IDSS @VDSS(V): 60; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 75m; RDSON1 Max.(Ω): 90m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 3; RDSON2 Typ.(Ω): 90m; RDSON2 Max.(Ω): 110m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 410; Qg Typ.(nC): 12; AEC-Q101 Qualified: No

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