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FMOS2302A1-H

FMOS2302A1-H

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FMOS2302A1-H

Package: SOT-23; Type: N MOS; BVDSS (V): 20; ID (A): 3; PD (W): 0.35; IDSS @VDSS(V): 20; IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.65; VGS(th) Max.(V): 1.2; VGS(th) @ID(mA): 0.05; RDSON1 Typ.(Ω): 45m; RDSON1 Max.(Ω): 60m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 3.6; RDSON2 Typ.(Ω): 70m; RDSON2 Max.(Ω): 115m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 3.1; Ciss Typ.(pF): 300; Qg Typ.(nC): 4; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: SOT-23; Type: N MOS; BVDSS (V): 20; ID (A): 3; PD (W): 0.35; IDSS @VDSS(V): 20; IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 0.65; VGS(th) Max.(V): 1.2; VGS(th) @ID(mA): 0.05; RDSON1 Typ.(Ω): 45m; RDSON1 Max.(Ω): 60m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 3.6; RDSON2 Typ.(Ω): 70m; RDSON2 Max.(Ω): 115m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 3.1; Ciss Typ.(pF): 300; Qg Typ.(nC): 4; AEC-Q101 Qualified: No

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