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FMOS02N10-H

FMOS02N10-H

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FMOS02N10-H

Package: SOT-23; BVDSS (V): 100; ID (A): 2.2; PD (W): 2.3; IDSS @VDSS(V): 100; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 220m; RDSON1 Max.(Ω): 286m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 2; RDSON2 Typ.(Ω): 223m; RDSON2 Max.(Ω): 312m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 1; Ciss Typ.(pF): 321; Qg Typ.(nC): 5.3; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: SOT-23; BVDSS (V): 100; ID (A): 2.2; PD (W): 2.3; IDSS @VDSS(V): 100; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 220m; RDSON1 Max.(Ω): 286m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 2; RDSON2 Typ.(Ω): 223m; RDSON2 Max.(Ω): 312m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 1; Ciss Typ.(pF): 321; Qg Typ.(nC): 5.3; AEC-Q101 Qualified: No

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