Supreme Components International, an authorised distributor, presents the DTN6N120SC3, a state-of-the-art N-Channel MOSFET manufactured by Din-tek Semiconductor. This MOSFET utilizes Silicon Carbide (SiC) to achieve exceptional performance characteristics. With a voltage rating of 1200V, the DTN6N120SC3 is designed for high-voltage applications requiring efficient power switching. Its SiC construction enables faster switching speeds, reduced switching losses, and lower on-resistance compared to traditional silicon MOSFETs. This results in improved energy efficiency and reduced heat dissipation. The DTN6N120SC3 is well-suited for applications such as power inverters, motor drives, and power factor correction circuits. Benefit from the reliability and performance of Din-tek Semiconductor products, available through Supreme Components International.
Product Categories
Specifications
Parameter | Value |
---|---|
Identifier | 17 A |
Packagetype | TO-247-3 |
Channelpolarity | N-Channel |
Drainsourcevoltage | 1200 Volts |
Drainsourceonresistance | 120 milliOhms |
Semiconductortechnology | Silicon Carbide |