DTN6N120SC3

N-Channel MOSFET 1200V Silicon Carbide

Supreme Components International, an authorised distributor, presents the DTN6N120SC3, a state-of-the-art N-Channel MOSFET manufactured by Din-tek Semiconductor. This MOSFET utilizes Silicon Carbide (SiC) to achieve exceptional performance characteristics. With a voltage rating of 1200V, the DTN6N120SC3 is designed for high-voltage applications requiring efficient power switching. Its SiC construction enables faster switching speeds, reduced switching losses, and lower on-resistance compared to traditional silicon MOSFETs. This results in improved energy efficiency and reduced heat dissipation. The DTN6N120SC3 is well-suited for applications such as power inverters, motor drives, and power factor correction circuits. Benefit from the reliability and performance of Din-tek Semiconductor products, available through Supreme Components International.

Product Categories

Sic MOSFET

Specifications

Parameter Value
Identifier 17 A
Packagetype TO-247-3
Channelpolarity N-Channel
Drainsourcevoltage 1200 Volts
Drainsourceonresistance 120 milliOhms
Semiconductortechnology Silicon Carbide

Datasheet

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