The DTN110N120SC4 from DIN-TEK SEMICONDUCTOR is a robust 1200V Silicon Carbide (SiC) MOSFET designed for high-efficiency power switching applications. With a low on-resistance of 110 mOhm, this MOSFET minimizes conduction losses, contributing to improved overall system efficiency. Supreme Components International, an authorised distributor, provides access to this cutting-edge component. SiC MOSFETs offer significant advantages over traditional silicon MOSFETs, including faster switching speeds, lower switching losses, and higher operating temperatures. This makes them suitable for demanding applications such as solar inverters, electric vehicle chargers, and power factor correction circuits. The DTN110N120SC4 enables designers to create more compact, efficient, and reliable power electronic systems. Benefit from the superior performance of SiC technology with this DIN-TEK SEMICONDUCTOR MOSFET.
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Specifications
Parameter | Value |
---|---|
Identifier | 27A |
Technology | Silicon Carbide |
Gate Charge | 65nC |
Package Type | TO-247-3 |
Voltage Rating | 1200 Volts |
Drain Source Resistance On State | 110 mOhm |