DIP050S120
| Parameter | Value |
|---|---|
| Type | Wire-lead |
| Package | TO-247Plus-3L |
| Qualification | Industrial Grade |
| Config | Single |
| Life Cycle | engineering sample |
| VCES [V] | 1200 |
| IC100 [A] | 50 |
| ICM [A] | 100 |
| pol | N (reSonant) |
| Tjmax [°C] | 175 |
| Ptot [W] | 600 |
| @ TLoc [°C] | 25 |
| Location | |
| VGEthmin [V] | 4.5 |
| VGEth [V] | 5.8 |
| VGEthmax [V] | 6.8 |
| VCEsat100 [V] | 2.9 |
| @ IC100 [A] | 50 |
| @ VGE [V] | 15 |
| ton [ns] | 41 |
| toff [ns] | 135 |
Product Categories:
IGBT (Insulated Gate Bipolar Transistors)
Transistors