
The CGD65D055SP2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. This enhancement mode GaN transistor boasts a voltage rating of 650V and a low on-resistance of 55mOhm, enabling highly efficient power conversion. As an authorised distributor of Cambridge GaN Devices, Supreme Components International provides access to this state-of-the-art component. GaN technology offers superior switching performance compared to traditional silicon MOSFETs, resulting in reduced power losses and improved system efficiency. The CGD65D055SP2 is well-suited for applications such as high-frequency power supplies, solar inverters, electric vehicle chargers, and motor drives. Its compact size and high power density make it an excellent choice for space-constrained designs. Explore the potential of GaN technology with this reliable and high-performance transistor from Cambridge GaN Devices, available through Supreme Components International.
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Specifications
Parameter | Value |
---|---|
Gatecharge | 11 nanocoulombs |
Packagetype | DFN8x8 |
Currentrating | 30 Amperes |
Voltagerating | 650 Volts |
Operatingtemperature | -55 degrees Celsius to +150 degrees Celsius |
Drainsourceonresistance | 55 milliohms |
Ordering Information
Parameter | Value |
---|---|
Packaging Type | TRAY |