Reference Only
CGD65C055SP2
650V, 55mOhm GaN HEMT in DFN8x8 package
Datasheet
CGD65C055SP2 Datasheet
Technical Specifications
| Attribute | Description |
|---|---|
| Technology | Gallium Nitride High Electron Mobility Transistor |
| Gate Charge | 11 nC |
| Package Type | DFN8x8 |
| Voltage Rating | 650V |
| Input Capacitance | 540 pF |
| Total Gate Charge | 11 nC |
| Output Capacitance | 45 pF |
| Operating Temperature | -55°C to +150°C |
| Drain Source On Resistance | 55 mOhm |