
Manufacturer | Cambridge GaN Devices |
Short Description | 650V, 55mOhm GaN HEMT in DFN8x8 package |
Datasheet | 📄 Datasheet |
Product Attributes
TYPE
DESCRIPTION
Category
Gatecharge
11 nC
Technology
Gallium Nitride High Electron Mobility Transistor
Packagetype
DFN8x8
Voltagerating
650V
Totalgatecharge
11 nC
Inputcapacitance
540 pF
Outputcapacitance
45 pF
Operatingtemperature
-55°C to +150°C
Drainsourceonresistance
55 mOhm
Ordering Information
Parameter
Value
Packaging Type
TAPE_AND_REEL
Full Description
The CGD65C055SP2 is a 650V, 55mOhm GaN HEMT from Cambridge GaN Devices, designed for high-efficiency power conversion. This GaN MOSFET, available at Supreme Components International, an authorised distributor, offers significant advantages over traditional silicon MOSFETs, including lower on-resistance, faster switching speeds, and reduced gate charge. The device is packaged in a space-saving DFN8x8, making it suitable for high-density power designs. Applications include AC-DC power supplies, DC-DC converters, inverters, motor drives, and high-frequency power amplifiers. Its superior performance enables higher power density and improved overall system efficiency. Explore the benefits of GaN technology with this cutting-edge device.