Cambridge GaN Devices Logo
Manufacturer Part Number (MPN) CGD65C055SP2
Manufacturer Cambridge GaN Devices
Short Description 650V, 55mOhm GaN HEMT in DFN8x8 package
Datasheet 📄 Datasheet

Supreme Components is an authorized distributor of Cambridge GaN Devices. We do not carry stock of this item but can quote upon request. Submit your request using the form.

Product Attributes

TYPE
DESCRIPTION
Category
Technology
Gallium Nitride High Electron Mobility Transistor
Gate Charge
11 nC
Package Type
DFN8x8
Voltage Rating
650V
Input Capacitance
540 pF
Total Gate Charge
11 nC
Output Capacitance
45 pF
Operating Temperature
-55°C to +150°C
Drain Source On Resistance
55 mOhm

Ordering Information

Parameter
Value
Packaging Type
TAPE_AND_REEL

Full Description

The CGD65C055SP2 is a 650V, 55mOhm GaN HEMT from Cambridge GaN Devices, designed for high-efficiency power conversion. This GaN MOSFET, available at Supreme Components International, an authorised distributor, offers significant advantages over traditional silicon MOSFETs, including lower on-resistance, faster switching speeds, and reduced gate charge. The device is packaged in a space-saving DFN8x8, making it suitable for high-density power designs. Applications include AC-DC power supplies, DC-DC converters, inverters, motor drives, and high-frequency power amplifiers. Its superior performance enables higher power density and improved overall system efficiency. Explore the benefits of GaN technology with this cutting-edge device.

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Supreme Components is an authorized distributor of Cambridge GaN Devices. We do not carry stock of this item but can quote upon request. Submit your request using the form.

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