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CGD65C055SP2
Manufacturer Cambridge GaN Devices
Short Description 650V, 55mOhm GaN HEMT in DFN8x8 package
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gatecharge
11 nC
Technology
Gallium Nitride High Electron Mobility Transistor
Packagetype
DFN8x8
Voltagerating
650V
Totalgatecharge
11 nC
Inputcapacitance
540 pF
Outputcapacitance
45 pF
Operatingtemperature
-55°C to +150°C
Drainsourceonresistance
55 mOhm

Ordering Information

Parameter
Value
Packaging Type
TAPE_AND_REEL

Full Description

The CGD65C055SP2 is a 650V, 55mOhm GaN HEMT from Cambridge GaN Devices, designed for high-efficiency power conversion. This GaN MOSFET, available at Supreme Components International, an authorised distributor, offers significant advantages over traditional silicon MOSFETs, including lower on-resistance, faster switching speeds, and reduced gate charge. The device is packaged in a space-saving DFN8x8, making it suitable for high-density power designs. Applications include AC-DC power supplies, DC-DC converters, inverters, motor drives, and high-frequency power amplifiers. Its superior performance enables higher power density and improved overall system efficiency. Explore the benefits of GaN technology with this cutting-edge device.

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