CGD65C055SP2
650V, 55mOhm GaN HEMT in DFN8x8 package
PRODUCT DETAILS
Product Description
The CGD65C055SP2 is a 650V, 55mOhm GaN HEMT from Cambridge GaN Devices, designed for high-efficiency power conversion. This GaN MOSFET, available at Supreme Components International, an authorised distributor, offers significant advantages over traditional silicon MOSFETs, including lower on-resistance, faster switching speeds, and reduced gate charge. The device is packaged in a space-saving DFN8x8, making it suitable for high-density power designs. Applications include AC-DC power supplies, DC-DC converters, inverters, motor drives, and high-frequency power amplifiers. Its superior performance enables higher power density and improved overall system efficiency. Explore the benefits of GaN technology with this cutting-edge device.
Product Tags
Technical Specifications
| Technology | Gallium Nitride High Electron Mobility Transistor |
|---|---|
| Gate charge | 11 nC |
| Package type | DFN8x8 |
| Voltage rating | 650V |
| Input capacitance | 540 pF |
| Total gate charge | 11 nC |
| Output capacitance | 45 pF |
| Operating temperature | -55°C to +150°C |
| Drain source on resistance | 55 mOhm |
Ordering Information
| Packaging Type | Tape And Reel |
|---|
Ships in:
1 day
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