| Manufacturer Part Number (MPN) | CGD65B240SH2 |
| Manufacturer | Cambridge GaN Devices |
| Short Description | <p>The <strong>CGD65B240SH2</strong> is a 650V, 240mΩ GaN HEMT from Cambridge GaN Devices, ideal for high-efficiency power conversion.</p> |
| Datasheet | 📄 Datasheet |
Supreme Components is an authorized distributor of Cambridge GaN Devices. We do not carry stock of this item but can quote upon request. Submit your request using the form.
Product Attributes
Ordering Information
Full Description
The CGD65B240SH2 is a 650V, 240mΩ, 10A Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) from Cambridge GaN Devices. This device is designed for high-efficiency power conversion in a variety of applications, including AC/DC power supplies, Power Factor Correction (PFC), and motor drives. Its superior switching performance and low on-resistance contribute to reduced power losses and improved system efficiency. The CGD65B240SH2 is housed in a compact DFN8x8 package, enabling high power density designs. As an authorised distributor of Cambridge GaN Devices, Supreme Components International guarantees the authenticity and quality of this product. Benefit from enhanced power efficiency and reliability with this advanced GaN HEMT.
Looking for more Cambridge GaN Devices connectors? [Click here to browse all Cambridge GaN Devices parts]