CGD65B240SH2

<p>The <strong>CGD65B240SH2</strong> is a 650V, 240mΩ GaN HEMT from Cambridge GaN Devices, ideal for high-efficiency power conversion.</p>

The CGD65B240SH2 is a 650V, 240mΩ, 10A Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) from Cambridge GaN Devices. This device is designed for high-efficiency power conversion in a variety of applications, including AC/DC power supplies, Power Factor Correction (PFC), and motor drives. Its superior switching performance and low on-resistance contribute to reduced power losses and improved system efficiency. The CGD65B240SH2 is housed in a compact DFN8x8 package, enabling high power density designs. As an authorised distributor of Cambridge GaN Devices, Supreme Components International guarantees the authenticity and quality of this product. Benefit from enhanced power efficiency and reliability with this advanced GaN HEMT.

Product Categories

GaN transistors

Specifications

Parameter Value
Package Case DFN8x8
Mounting Type Surface Mount
On Resistance 240 mOhms
Number Of Pins 8
Transistor Type GaN HEMT
Power Dissipation 60 Watts
Drain Source Voltage 650 Volts
Gate Threshold Voltage 3.5 Volts
Continuous Drain Current 10 Amperes
Operating Temperature Range -55 Degrees Celsius to 150 Degrees Celsius

Ordering Information

Parameter Value
Mpq 2500
Weight 0.3g
Packaging Type TAPE_AND_REEL

Datasheet

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