Reference Only
CGD65B240SH2
The CGD65B240SH2 is a 650V, 240mΩ GaN HEMT from Cambridge GaN Devices, ideal for high-efficiency power conversion.
Datasheet
CGD65B240SH2 Datasheet
Technical Specifications
| Attribute | Description |
|---|---|
| Package Case | DFN8x8 |
| Mounting Type | Surface Mount |
| On Resistance | 240 mOhms |
| Number Of Pins | 8 |
| Transistor Type | GaN HEMT |
| Power Dissipation | 60 Watts |
| Drain Source Voltage | 650 Volts |
| Gate Threshold Voltage | 3.5 Volts |
| Continuous Drain Current | 10 Amperes |
| Operating Temperature Range | -55 Degrees Celsius to 150 Degrees Celsius |