
The CGD65B130S2, manufactured by Cambridge GaN Devices, represents a significant advancement in power electronics. This enhancement mode GaN transistor boasts a voltage rating of 650V and a low on-resistance of 130mOhm, enabling efficient power conversion and reduced energy consumption. Its GaN-on-Si technology allows for higher switching frequencies and improved thermal performance compared to traditional silicon MOSFETs. Supreme Components International is an authorised distributor of Cambridge GaN Devices, ensuring you receive authentic and reliable components. This GAN_MOSFET is suitable for a wide range of applications, including power supplies, inverters, and motor drives, where high efficiency and compact size are critical. Benefit from the superior performance and reliability of GaN technology with the CGD65B130S2.
Product Categories
Specifications
Parameter | Value |
---|---|
Gatecharge | 10 nanocoulombs |
Packagetype | DFN8x8 |
Voltagerating | 650 Volts |
Drainsourceonresistance | 130 milliohms |
Operatingtemperaturerange | -55 degrees Celsius to +150 degrees Celsius |
Ordering Information
Parameter | Value |
---|---|
Packaging Type | TAPE_AND_REEL |