Cambridge GaN Devices Logo
Manufacturer Part Number (MPN) CGD65A055SH2
Manufacturer Cambridge GaN Devices
Short Description 650V, 55mOhm GaN HEMT in DFN8x8 package.
Datasheet 📄 Datasheet

Supreme Components is an authorized distributor of Cambridge GaN Devices. We do not carry stock of this item but can quote upon request. Submit your request using the form.

Product Attributes

TYPE
DESCRIPTION
Category
Gate Charge
10 nC
Package Type
DFN8x8
Drain Source Voltage
650V
Continuous Drain Current
20A
Drain Source On Resistance
55 mOhm
Operating Temperature Range
-55°C to +150°C

Ordering Information

Parameter
Value
Packaging Type
TAPE_AND_REEL

Full Description

Supreme Components International, an authorised distributor of Cambridge GaN Devices, presents the CGD65A055SH2, a state-of-the-art 650V, 55mOhm GaN HEMT. This GAN_MOSFET, manufactured by Cambridge GaN Devices, is designed for high-efficiency power conversion. Its DFN8x8 package allows for compact designs without compromising performance. The CGD65A055SH2 offers significantly improved switching characteristics compared to traditional silicon MOSFETs, leading to lower power losses and higher system efficiency. This device is suitable for a wide range of applications, including power supplies, inverters, and motor drives. Benefit from the superior performance and reliability of GaN technology with this advanced component. Trust Supreme Components International for your electronic component needs.

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Supreme Components is an authorized distributor of Cambridge GaN Devices. We do not carry stock of this item but can quote upon request. Submit your request using the form.

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