CGD65A055SH2

Reference Only

CGD65A055SH2

650V, 55mOhm GaN HEMT in DFN8x8 package.

Sub Category:
OTHER
Cambridge GaN Devices

Product Description

Supreme Components International, an authorised distributor of Cambridge GaN Devices, presents the CGD65A055SH2, a state-of-the-art 650V, 55mOhm GaN HEMT. This GAN_MOSFET, manufactured by Cambridge GaN Devices, is designed for high-efficiency power conversion. Its DFN8x8 package allows for compact designs without compromising performance. The CGD65A055SH2 offers significantly improved switching characteristics compared to traditional silicon MOSFETs, leading to lower power losses and higher system efficiency. This device is suitable for a wide range of applications, including power supplies, inverters, and motor drives. Benefit from the superior performance and reliability of GaN technology with this advanced component. Trust Supreme Components International for your electronic component needs.

Product Tags

Technical Specifications

Attribute Description
Gate Charge 10 nC
Package Type DFN8x8
Drain Source Voltage 650V
Continuous Drain Current 20A
Drain Source On Resistance 55 mOhm
Operating Temperature Range -55°C to +150°C
This is a staging environment

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