
Supreme Components International, an authorised distributor of Cambridge GaN Devices, presents the CGD65A055SH2, a state-of-the-art 650V, 55mOhm GaN HEMT. This GAN_MOSFET, manufactured by Cambridge GaN Devices, is designed for high-efficiency power conversion. Its DFN8x8 package allows for compact designs without compromising performance. The CGD65A055SH2 offers significantly improved switching characteristics compared to traditional silicon MOSFETs, leading to lower power losses and higher system efficiency. This device is suitable for a wide range of applications, including power supplies, inverters, and motor drives. Benefit from the superior performance and reliability of GaN technology with this advanced component. Trust Supreme Components International for your electronic component needs.
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Specifications
Parameter | Value |
---|---|
Gatecharge | 10 nC |
Packagetype | DFN8x8 |
Drainsourcevoltage | 650V |
Continuousdraincurrent | 20A |
Drainsourceonresistance | 55 mOhm |
Operatingtemperaturerange | -55°C to +150°C |
Ordering Information
Parameter | Value |
---|---|
Packaging Type | TAPE_AND_REEL |