CGD65A055SH2

650V, 55mOhm GaN HEMT in DFN8x8 package.

Supreme Components International, an authorised distributor of Cambridge GaN Devices, presents the CGD65A055SH2, a state-of-the-art 650V, 55mOhm GaN HEMT. This GAN_MOSFET, manufactured by Cambridge GaN Devices, is designed for high-efficiency power conversion. Its DFN8x8 package allows for compact designs without compromising performance. The CGD65A055SH2 offers significantly improved switching characteristics compared to traditional silicon MOSFETs, leading to lower power losses and higher system efficiency. This device is suitable for a wide range of applications, including power supplies, inverters, and motor drives. Benefit from the superior performance and reliability of GaN technology with this advanced component. Trust Supreme Components International for your electronic component needs.

Product Categories

GaN transistors

Specifications

Parameter Value
Gatecharge 10 nC
Packagetype DFN8x8
Drainsourcevoltage 650V
Continuousdraincurrent 20A
Drainsourceonresistance 55 mOhm
Operatingtemperaturerange -55°C to +150°C

Ordering Information

Parameter Value
Packaging Type TAPE_AND_REEL

Datasheet

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