BD139Z-H

Reference Only

BD139Z-H

NPN BJT, 80V, 1.5A, 12.5W, TO-126

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
OTHER
Formosa Microsemi

Product Description

The BD139Z-H is a high-performance NPN BJT (Bipolar Junction Transistor) manufactured by Formosa Microsemi. This transistor is ideal for a wide range of applications, including audio amplifiers, power supplies, and general-purpose switching circuits. With a collector-emitter voltage (Vceo) of 80V and a continuous collector current (Ic) of 1.5A, the BD139Z-H provides robust performance in demanding environments. Its power dissipation of 12.5W ensures efficient operation. The device is packaged in a TO-126 package for easy mounting and thermal management. As an authorised distributor of Formosa Microsemi, Supreme Components International guarantees the authenticity and quality of the BD139Z-H. This transistor offers excellent gain linearity and low saturation voltage, making it a reliable choice for your electronic designs.

Product Tags

Technical Specifications

Attribute Description
Package Type TO-126
Polarity Type NPN
Dc Current Gain 40 to 160
Collector Current 1.5 Amperes
Power Dissipation 12.5 Watts
Transition Frequency 50 MHz
Collector Emitter Voltage 80 Volts
Operating Temperature Range -65 Degrees Celsius to 150 Degrees Celsius
This is a staging environment

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