2SB649
PNP BJT, 80V, 3A, Through Hole
PRODUCT DETAILS
Product Description
The 2SB649 is a PNP Bipolar Junction Transistor (BJT) manufactured by JSCJ (JCET). This through-hole component is ideal for a variety of applications, including amplification and switching circuits. It features a collector-emitter voltage (Vceo) of 80V, a continuous collector current (Ic) of 3A, and a power dissipation of 1.2W. The 2SB649 is designed for easy mounting and offers robust performance in demanding environments. As an authorized distributor of JSCJ (JCET) components, Supreme Components International guarantees the authenticity and quality of this product. This BJT is a reliable choice for your electronic designs.
Product Tags
Technical Specifications
| Package type | TO-126 |
|---|---|
| Dc current gain | 60 to 200 |
| Transistor polarity | PNP |
| Transition frequency | 8 MHz |
| Power dissipation maximum | 1.2 Watts |
| Collector current maximum dc | 3 Amperes |
| Operating temperature maximum | 150 Degrees Celsius |
| Collector emitter voltage maximum | 80 Volts |
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