Reference Only
2N7002KDW6-H
Package: SOT-363; Type: Dual N MOS; ESD: Yes; BVDSS (V): 60; ID (A): 0.2; PD (W): 0.38; IDSS @VDSS(V): 60; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): -0.25; RDSON1 Typ.(Ω): 1.8; RDSON1 Max.(Ω): 2.3; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 0.3; RDSON2 Typ.(Ω): 2.1; RDSON2 Max.(Ω): 2.87; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): 0.2; Ciss Typ.(pF): 28; Qg Typ.(nC): 1.7; AEC-Q101 Qualified: No
Manufacturer:
Formosa MicrosemiCategory:
Discrete Semiconductors, Integrated Circuits (ics), Optoelectronics
Sub Category:
MOSFETs
Product Description
Package: SOT-363; Type: Dual N MOS; ESD: Yes; BVDSS (V): 60; ID (A): 0.2; PD (W): 0.38; IDSS @VDSS(V): 60; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): -0.25; RDSON1 Typ.(Ω): 1.8; RDSON1 Max.(Ω): 2.3; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 0.3; RDSON2 Typ.(Ω): 2.1; RDSON2 Max.(Ω): 2.87; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): 0.2; Ciss Typ.(pF): 28; Qg Typ.(nC): 1.7; AEC-Q101 Qualified: No