The 2N6298 is a robust NPN Bipolar Junction Transistor (BJT) manufactured by CENTRAL SEMICONDUCTOR. This transistor is designed for a wide range of amplifier and switching applications. Key features include a collector-emitter voltage (Vceo) of 80V, a continuous collector current (Ic) of 10A, and a power dissipation of up to 150W. The 2N6298 is housed in a rugged TO-3 package, providing excellent thermal performance and reliability. This makes it suitable for demanding power applications. As an authorised distributor of CENTRAL SEMICONDUCTOR, Supreme Components International guarantees the authenticity and quality of this product. Consider the 2N6298 for your next design requiring a reliable and high-performance BJT.