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2N6132
Manufacturer Central Semiconductor
Short Description PNP Bipolar Power Transistor, 80V, 4A, TO-66 Package
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Package Type
TO-66
Polarity Type
PNP
Power Dissipation
40 W
Collector Dc Current
4 A
Transition Frequency
10 MHz
Maximum Dc Current Gain
70
Minimum Dc Current Gain
20
Collector Emitter Voltage
80 V
Maximum Operating Temperature
150 °C

Full Description

The 2N6132 is a PNP Bipolar Junction Transistor (BJT) manufactured by CENTRAL SEMICONDUCTOR. Supreme Components International is an authorised distributor of CENTRAL SEMICONDUCTOR components, ensuring you receive genuine and high-quality products. This transistor is housed in a TO-66 package and is designed for various amplifier and switching applications. Key specifications include a collector-emitter voltage (Vceo) of 80V and a continuous collector current (Ic) of 4A. The 2N6132 offers reliable performance in circuits requiring moderate power handling capabilities. Its PNP configuration makes it suitable for applications where a negative base current is needed to control a larger collector current. Consider the 2N6132 for your next discrete semiconductor design.

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