2N5822
N-Channel Silicon Junction FET by Central Semiconductor
Brand
Product Category
Bipolar Transistors
Product Sub category
General Purpose Transistors
PRODUCT DETAILS
Product Description
The 2N5822, manufactured by CENTRAL SEMICONDUCTOR, is a high-performance N-Channel Silicon Junction FET designed for a wide range of applications. As an authorised distributor, Supreme Components International ensures you receive genuine, high-quality components. This discrete semiconductor offers excellent switching characteristics and is suitable for both small-signal and amplifier circuits. Its robust design guarantees reliable operation in demanding environments. Benefit from Supreme Components International's extensive inventory and expert support. We are committed to providing our customers with the best electronic components and services. Trust Supreme Components International for all your semiconductor needs. Order the 2N5822 today and experience the difference!
Product Tags
Technical Specifications
| Polarity | N-Channel |
|---|---|
| Package type | TO-92 |
| Mounting type | Through Hole |
| Maximum power dissipation | 300 milliwatts |
| Maximum drain-source voltage | 25 Volts |
| Maximum gate-source cutoff voltage | -8 Volts |
| Maximum gate-source leakage current | 1 nanoampere |
| Maximum drain-source leakage current | 5 milliamperes |
| Minimum drain-source leakage current | 1 milliampere |
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