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2N5822
Manufacturer Central Semiconductor
Short Description N-Channel Silicon Junction FET by Central Semiconductor
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Polarity
N-Channel
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
300 milliwatts
Maximum Drain-source Voltage
25 Volts
Maximum Gate-source Cutoff Voltage
-8 Volts
Maximum Gate-source Leakage Current
1 nanoampere
Maximum Drain-source Leakage Current
5 milliamperes
Minimum Drain-source Leakage Current
1 milliampere

Full Description

The 2N5822, manufactured by CENTRAL SEMICONDUCTOR, is a high-performance N-Channel Silicon Junction FET designed for a wide range of applications. As an authorised distributor, Supreme Components International ensures you receive genuine, high-quality components. This discrete semiconductor offers excellent switching characteristics and is suitable for both small-signal and amplifier circuits. Its robust design guarantees reliable operation in demanding environments. Benefit from Supreme Components International's extensive inventory and expert support. We are committed to providing our customers with the best electronic components and services. Trust Supreme Components International for all your semiconductor needs. Order the 2N5822 today and experience the difference!

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