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2N5298
Manufacturer Central Semiconductor
Short Description NPN Bipolar Transistor, 80V, 4A, TO-220 package.
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Package Type
TO-220
Dc Current Gain
20 to 70
Transistor Polarity
NPN
Transition Frequency
4 Megahertz
Collector Current Maximum
4 Amperes
Power Dissipation Maximum
36 Watts
Maximum Operating Temperature
150 Degrees Celsius
Collector Emitter Voltage Maximum
80 Volts

Full Description

The 2N5298 is a versatile NPN Bipolar Junction Transistor (BJT) manufactured by CENTRAL SEMICONDUCTOR. This transistor is well-suited for a variety of applications, including linear amplifiers, switching circuits, and general-purpose amplification. Key features include a collector-emitter voltage (Vceo) of 80V, a collector current (Ic) of 4A, and a power dissipation of up to 30W. The 2N5298's robust design and TO-220 package make it easy to integrate into existing and new designs. Its high current and voltage capabilities make it a reliable choice for demanding applications. As an authorised distributor, Supreme Components International guarantees the authenticity and quality of this CENTRAL SEMICONDUCTOR product.

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