The 2N3114 is a silicon NPN Bipolar Junction Transistor (BJT) manufactured by CENTRAL_SEMICONDUCTOR. This transistor is designed for general-purpose amplifier and switching applications. It features a collector-emitter voltage (Vceo) of 80V, a collector-base voltage (Vcbo) of 100V, and an emitter-base voltage (Vebo) of 5V. The continuous collector current (Ic) is rated at 0.5A, with a power dissipation of 0.8W. The 2N3114 is housed in a TO-5 package, providing robust mechanical and thermal performance. As an authorised distributor of CENTRAL_SEMICONDUCTOR, Supreme Components International guarantees the authenticity and quality of this component. This BJT offers reliable performance in a wide range of electronic circuits.
Product Categories
General Purpose Transistors
Bipolar Transistors
Specifications
| Parameter | Value |
|---|---|
| Package Type | TO-5 |
| Transistor Polarity | NPN |
| Transition Frequency | 50 Megahertz |
| Dc Current Gain Maximum | 60 |
| Dc Current Gain Minimum | 20 |
| Collector Current Maximum | 0.5 Amperes |
| Power Dissipation Maximum | 0.8 Watts |
| Operating Temperature Maximum | 175 Degrees Celsius |
| Collector Emitter Voltage Maximum | 80 Volts |