2N3114
NPN BJT Transistor, 80V, 0.5A, TO-5 Package
PRODUCT DETAILS
Product Description
The 2N3114 is a silicon NPN Bipolar Junction Transistor (BJT) manufactured by CENTRAL_SEMICONDUCTOR. This transistor is designed for general-purpose amplifier and switching applications. It features a collector-emitter voltage (Vceo) of 80V, a collector-base voltage (Vcbo) of 100V, and an emitter-base voltage (Vebo) of 5V. The continuous collector current (Ic) is rated at 0.5A, with a power dissipation of 0.8W. The 2N3114 is housed in a TO-5 package, providing robust mechanical and thermal performance. As an authorised distributor of CENTRAL_SEMICONDUCTOR, Supreme Components International guarantees the authenticity and quality of this component. This BJT offers reliable performance in a wide range of electronic circuits.
Product Tags
Technical Specifications
| Package type | TO-5 |
|---|---|
| Transistor polarity | NPN |
| Transition frequency | 50 Megahertz |
| Dc current gain maximum | 60 |
| Dc current gain minimum | 20 |
| Collector current maximum | 0.5 Amperes |
| Power dissipation maximum | 0.8 Watts |
| Operating temperature maximum | 175 Degrees Celsius |
| Collector emitter voltage maximum | 80 Volts |
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