2N3114

NPN BJT Transistor, 80V, 0.5A, TO-5 Package

The 2N3114 is a silicon NPN Bipolar Junction Transistor (BJT) manufactured by CENTRAL_SEMICONDUCTOR. This transistor is designed for general-purpose amplifier and switching applications. It features a collector-emitter voltage (Vceo) of 80V, a collector-base voltage (Vcbo) of 100V, and an emitter-base voltage (Vebo) of 5V. The continuous collector current (Ic) is rated at 0.5A, with a power dissipation of 0.8W. The 2N3114 is housed in a TO-5 package, providing robust mechanical and thermal performance. As an authorised distributor of CENTRAL_SEMICONDUCTOR, Supreme Components International guarantees the authenticity and quality of this component. This BJT offers reliable performance in a wide range of electronic circuits.

Product Categories

General Purpose Transistors Bipolar Transistors

Specifications

Parameter Value
Package Type TO-5
Transistor Polarity NPN
Transition Frequency 50 Megahertz
Dc Current Gain Maximum 60
Dc Current Gain Minimum 20
Collector Current Maximum 0.5 Amperes
Power Dissipation Maximum 0.8 Watts
Operating Temperature Maximum 175 Degrees Celsius
Collector Emitter Voltage Maximum 80 Volts

Datasheet

Download Datasheet

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