1N5527B

Reference Only

1N5527B

Mounting: Through-Hole;Case: DO-35; Configuration/: Single: Low Level; PD max: 400mW; IZM max:  - ; VZ(NOM): 7.5V; Vzmin: 7.125V; Vzmax: 7.875V; @IZT: 1mA; ZZTmax(in Ω): 35Ω; @IZT: 1mA; IR: 0.5μA; @VR: 6.8V

Category:
Discrete Semiconductors, Integrated Circuits (ics), Optoelectronics
Sub Category:
Other
Central Semiconductor

Product Description

Mounting: Through-Hole;Case: DO-35; Configuration/: Single: Low Level; PD max: 400mW; IZM max:  - ; VZ(NOM): 7.5V; Vzmin: 7.125V; Vzmax: 7.875V; @IZT: 1mA; ZZTmax(in Ω): 35Ω; @IZT: 1mA; IR: 0.5μA; @VR: 6.8V

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