| Manufacturer | DIODES |
| Short Description | <p>N-CHANNEL ENHANCEMENT MODE MOSFET, SOT223</p> |
Product Attributes
TYPE
DESCRIPTION
Category
Package
SOT223
Polarity
N-Channel
Technology
MOSFET
Mounting Type
Surface Mount
Power Dissipation Pd
2 W
Operating Temperature
-55°C to +150°C
Gate Source Voltage Vgs
±20 V
Drain Source Voltage Vds
240 V
Pulsed Drain Current Idm
1.5 A
On State Resistance Rds On
12 Ohms @ VGS=10V
Continuous Drain Current Id
0.26 A
Gate Threshold Voltage Vgs Th
1 V to 3 V
Ordering Information
Parameter
Value
Mpq
1000
Weight
0.115 g
Packaging Type
TAPE_AND_REEL
Full Description
N-CHANNEL ENHANCEMENT MODE MOSFET, SOT223